Emerging Technologies 2018 Session Listing
The program is subject to change in the weeks leading up to the conference. Check back here for the latest schedule, or follow us on Twitter for real-time notice of updates to the program.
We plan to have a firm program available no later than February 5, 2018.
Session C1: Radiation Detection and Imaging
Start Time: 13:30, Wednesday, May 09
Chaired by Chair to be Announced
- Paul Lecoq, CERN-European Organization for Nuclear Research
A metamaterial approach to reach 10 ps timing resolution with a scintillator-based detector
- Maurice Garcia-Sciveres, Lawrence Berkeley National Laboratory
Challenges of high rate and radiation imaging in particle physics
- Alex Moiseev, NASA
High-energy 3D calorimeter for use in gamma-ray astronomy based on position-sensitive virtual Frisch-Grid CdZnTe detectors
- Daniela Muenzel, Technische Universität München
Clinical potential of spectral photon-counting computed tomography
- Speaker to be Confirmed, MARS Research Group, New Zealand
Spectral molecular imaging using MARS scanner - in vivo potential
- Matthew Veale, Science and Technology Facilities Council
Hard X-ray and gamma ray imaging — the development of a new generation of sensors at the STFC Rutherford Appleton Laboratory
The development of the latest generation of light sources is posing challenging requirements for radiation imaging detectors. Facilities such as X-ray Free Electron Lasers (FELs) deliver coherent, ultra-high brilliance, pulses with femtosecond lengths and require detectors with not only a large dynamic range but also an architecture that allows operation at MHz frame rates. Recent advances in the development of laser-driven radiation sources has also led to the establishment of a new class of facilities capable of producing high flux beams of highly-penetrating MeV Gamma-rays that can also contain many other different types of radiation.
Detectors developed for use at existing light sources have relied on silicon sensors, however, this push towards higher energies (>10 keV) means the detection efficiency of silicon will become seriously compromised due to its poor stopping power. To meet the challenges of these high flux and high energy facilities requires the use of a variety of technology options that include compound semiconductors such as Cadmium Zinc Telluride (CdZnTe) and Gallium Arsenide (GaAs) as well as novel scintillator materials coupled to CMOS sensors.
The aim of the STFC Rutherford Appleton Laboratory’s current detector development programme is to develop a suite of imaging detectors able to operate at these extremes of photon energy and flux. Results will be presented on recent measurements of GaAs:Cr and CdZnTe based detectors at the SLAC LCLS FEL as well as the use of CdTe and scintillator based imaging detectors at laser-driven radiation sources in the UK.
- COFFEE BREAK
- Justin Caram, University of California, Los Angeles (firstname.lastname@example.org)
- Jan Dudak, Czech Technical University in Prague (email@example.com)
- Mehadi Hassan, Duke University (firstname.lastname@example.org)
- Ali Kenchaf, ENSTA Bretagne (email@example.com)
- Yi-Hwa Liu, Yale University (firstname.lastname@example.org)
- Val O’Shea, University of Glasgow (val.o’email@example.com)
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