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Emerging Technologies 2018 Session Listing

The program is subject to change in the weeks leading up to the conference. Check back here for the latest schedule, or follow us on Twitter External link symbol for real-time notice of updates to the program.

We plan to have a firm program available no later than February 5, 2018.

Session D1: Thin Film Devices and Electronics

Start Time: 13:30, Wednesday, May 09
Room: TBD
Chaired by Zhehui (Jeff) Wang, Los Alamos National Laboratory (zwang@lanl.gov)

  • Zhehui (Jeff) Wang, Los Alamos National Laboratory (zwang@lanl.gov)

    Novel semiconductor processing techniques for imaging and sensor applications

  • Sebastjan Glinsek, LIST (sebastjan.glinsek@list.lu)

    Transparent piezoelectric films on glass for haptic applications

  • Rama Venkatasubramanian, Johns Hopkins University (Rama.Venkatasubramanian@jhuapl.edu)

    Thin film thermoelectric materials and devices for high-performance electronics

  • Sheng Xu, University of California, San Diego (shengxu@ucsd.edu)

    A hybridized approach to soft electronics: materials design and advanced microfabrication

  • Kyung-In Jung, Daegu Gyeongbuk Institute of Science and Technology (kijang@dgist.ac.kr)

    Skin-mountable electronic patches for the human

  • Natalie Stingelin, Imperial College London (n.stingelin-stutzmann@imperial.ac.uk)

    Organic and organic/inorganic optoelectronic thin-film devices: challenges and opportunities

    In the past decade, significant progress has been made in the fabrication of organic and inorganic/organic hybrid optoelectronic thin-film devices, such as light-emitting diodes (LEDs), field-effect transistors (FETs) or photovoltaics PVs). This has predominantly been due to important improvements of existing materials and the creation of a wealth of novel compounds. Many challenges, however, still exist. In the field of photovoltaic cells, real understanding of what structural and electronic features determine, for instance, the short-circuit current (Jsc), open-circuit voltage (Voc) and fill factor are still lacking; and the role of charge transfer states and which charge transfer states are critical for efficient charge generation have been strongly debated. In the field-effect transistor area, interfacial phenomena dictate charge injection, charge transport and beyond; gaining therefore further insights in this process will provide further step changes towards technological and practical application. A similar view applies to light-emitting diodes. Here, we will discuss a variety of devices in the context of interface phenomena and exemplify our approaches on well-defined model systems that permitted us to correlate insights into processes and interfacial structure with device performance, from processes within the active layers to interfacial processes that assist light-out-coupling/-in-coupling and beyond.

  • COFFEE BREAK (FOYER)

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  • Joachim Burghartz, Institut für Mikroelektronik Stuttgart (burghartz@ims-chips.de)

    Hybrid Systems-in-Foil (HySiF) — enabler of flexible electronics

  • Serge Oktyabrsky, SUNY Polytechnic Institute (soktyabrsky@sunypoly.edu)

    Ultrafast scintillation detector based on waveguiding nanomaterial

  • Weng W. Chow, Sandia National Laboratories (wwchow@sandia.gov)

  • Majeed Foad, Applied Materials (Majeed_Foad@amat.com)

  • Moon J. Kim, University of Texas at Dallas (moonkim@utdallas.edu)

  • Saleem Shaikh, Thin Film Devices, Inc. (sales@tfdinc.com)

 

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