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Emerging Technologies 2018 Session Listing

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Session D1: Thin Film Devices and Electronics

Start Time: 13:30, Wednesday, May 09
Room: Sutcliffe A
Chaired by Zhehui (Jeph) Wang, Los Alamos National Laboratory (

  • 13:30 Sebastjan Glinsek, LIST (

    Transparent piezoelectric thin films on glass for transducer applications

    Piezoelectric thin films on silicon substrates have reached industrial maturity (e.g. pMUTs, TFBARs, etc.), with sputtering and Chemical Solution Deposition (CSD) as the most advanced deposition methods. In the quest for devices with extended functionalities integration of piezoelectrics with non-silicon substrates are needed.


    Glass offers capability to combine piezoelectricity and transparency. However, deposition of piezoelectrics on glass is not straightforward due to interface reactions, low glass transition temperature Tg and the difference in thermal expansion coefficients. Therefore quality of the active layer depends strongly on the type of glass substrate and processing conditions.


    In this contribution I will present our recent work on Pb(Zr,Ti)O3 (PZT) thin films deposited by CSD on fused silica substrates. Buffer layers have been employed to obtain crack-free and single-phase perovskite films by annealing at 700°C. Transparent Al-doped ZnO (AZO) interdigital electrodes have been designed and deposited by atomic layer deposition, while standard metal electrodes were used for comparison. State-of-the-art electromechanical response, which can be exploited in ultrasonic applications, will be presented and discussed. Strategies to decrease crystallization temperature of the CSD-deposited PZT for integration with low-cost commercial glass substrates will be outlined in the second part of the presentation.

  • 13:50 Sheng Xu, University of California, San Diego (

    A hybridized approach to soft electronics: materials design and advanced microfabrication

    Wearable devices that are capable of acquiring multichannel physiological signals from the human body represent an important trend for healthcare monitoring, consumer electronics, and human-machine interface. The resulting search for pliable building blocks calls for approaches to bridge the gap between conventional high performance hard materials and soft biology. Combined strategies of materials design and advanced microfabrication on the system level present unique opportunities. In this presentation, I will discuss a rationally designed "island-bridge" matrix that allows hybridizing hard materials with soft substrates. Specifically, the hard components are integrated on the predefined distributed islands, and the wavy bridges will buckle out of the plane to absorb the externally applied stress. The result is a fully functional system that is rigid locally in the islands, but soft globally that enables conformal integration with the curvilinear human body. Demonstrated prototypes include a multichannel health monitor that can sense local field potentials, temperature, and acceleration, and wirelessly transmit the acquired data to the backend receiver. This is a platform technology, which holds profound implications for integrating a broad range of sensors, actuators, and circuit components, for diagnosing and treating a broad range of health conditions.

  • 14:10 Kyung-In Jang, Daegu Gyeongbuk Institute of Science and Technology (

    Skin-mountable electronic patches for the human

    To establish mechanics and material designs for transdermal biomedical patches in rugged and breathable forms, I proposed materials and composite designs for thin, breathable, soft electronics that can adhere strongly to the skin, with the ability to be applied and removed hundreds of times without damaging the devices or the skin. The figure on the left shows the approach that combines thin, ultralow modulus, cellular silicone materials with elastic, strain-limiting fabrics, to yield a compliant but rugged platform for stretchable electronics. With these unique mechanics and material integrations, new kinds of soft and robust skin-mountable devices have been developed in single or multimodal mode: mechanical, optical, electrical and radio frequency sensors for measuring hydration state, electrophysiological activity, pulse and cerebral oximetry.

  • 14:30 Joachim Burghartz, Institut für Mikroelektronik Stuttgart (

    Hybrid Systems-in-Foil (HySiF) — enabler of flexible electronics

    Flexible electronics add mechanical flexibility, adaptivity and stretchability as well as large-area placeability to electronic systems, thus allowing for conquering fundamentally new markets in consumer and commercial applications. Hybrid assembly of large- area devices and ultra-thin silicon chips on flexible substrates is now viewed as an enabler to high-performance and reliable industrial solutions as well as high-end consumer applications of flexible electronics. This talk discusses issues in ultra-thin chip fabrication, device modeling and circuit design, as well as assembly and interconnects for thin chips embedded in foil substrates. Particular attention will be given to the interface of the deep-submicrometer structures on thin, flexible chips to the sup-10-micrometer interconnects in assembly technologies. An interposer technology called ChipFilm Parch (CFP) will be presented and discussed. Various examples of dedicated applications of such HySiF components will be presented and compared.

  • 14:50 Moon J. Kim, University of Texas at Dallas (

    New and emerging 2D materials for nano-electronics

    Material dimensionality plays a crucial role in determining material physical properties. In particular, transition metal dichalcogenides (TMDs) exhibit diverse properties that depend on their composition: semiconductors, semimetals, metals, or superconductors. In exploring and developing these emerging materials, correlations between inherent materials characteristics and integrated device properties become ever more important. In this talk, I will present our recent studies on the characterization of 2D layered materials from Graphene to TMDs including MoS2, WSe2 and MoTe2, and their integrated hetero-structures for nano-electronic field effect devices. The location and nature of individual atoms, defects, interfaces, and the integrated device characteristics will be presented and discussed in detail.

  • 15:10 Christopher Künneth, Munich University of Applied Sciences (

    Explaining the ferroelectricity and pyroelectricity in HfO2 and ZrO2 thin films from an interface driven size effect with DFT

    Ferroelectricity and pyroelectricity in Hf1-xZrxO2 thin films promise a variety of applications ranging from ferroelectric memories to energy-related applications. The finding of ferroelectric properties in Hf1-xZrxO2 thin films was unexpected and the root cause of the ferroelectric phase formation is still not fully understood. Recently, it was shown that the contribution of the interface and grain boundary energies in a Gibbs energy model can explain the ferroelectric phase formation of Hf1-xZrxO2 in accordance with the experimental measurements. For the calculation of the interface contribution, the surface areas of the grains were determined directly from the measured grain radius distributions of the thin films. Additionally, the unknown interface energies for each crystallographic phase are determined from a fit to experimental measurements. The success of this simple model suggests that the ferroelectric and pyroelectric properties of Hf1-xZrxO2 can be engineered and optimized by controlling the growth of the grains. Aside from interface and grain boundary contributions, doping of Hf1-xZrxO2 thin films is a second mechanism, which significantly alters the present crystallographic phases composition and gives the opportunity to optimize and modify the properties of Hf1-xZrxO2 to the ultimate operating point of the desired device.

  • 15:30 COFFEE BREAK (Mt. Curie Foyer, Sutcliffe Foyer)


  • 15:50 Serge Oktyabrsky, SUNY Polytechnic Institute ( with K. Dropiewski, M. Yakimov, V. Tokranov and P. Murat

    Ultrafast scintillation detector based on waveguiding nanomaterial

    A picosecond-range timing of energetic charged particles and single x-ray photons is a long-standing challenge for many in high-energy and nuclear physics, medical 3D imaging and security applications. Physics and technology of InAs epitaxial quantum dot (QD) scintillator embedded into GaAs waveguiding matrix with integrated photodetector is presented. Due to relatively low bandgap in semiconductors in comparison to traditional solid-state scintillators, and very fast and efficient luminescence in the QDs, this heterostructure is expected to provide exceptional performance surpassing in several parameters the best traditional inorganic scintillators (such as LYSO): about 5x higher light yield (240,000 photons/MeV), and 20x faster decay time, resulting in unsurpassed speed (1-10 ps) and energy resolution in ultra-fast calorimetry (~0.5 % at 1MeV and >100MHz). Self-absorption in the QD waveguides of about 0.3/cm, decay time of 0.6 ns and time resolution of alpha-particles of <80 ps were measured experimentally providing strong evidence of this QD waveguiding nanomaterial being the fastest scintillation medium.

  • 16:10 Hagen Klauk, Max Planck Institute for Solid State Research (

    Submicron-channel-length organic thin-film transistors

    Organic thin-film transistors (TFTs) can typically be fabricated at temperatures below 150°C and thus not only on glass, but also on unconventional substrates, such as plastics and paper. This makes organic TFTs potentially useful for flexible, large-area electronics applications, such as rollable or foldable displays and conformable sensor arrays. In some of the more advanced applications envisioned for organic TFTs, the TFTs have to control electrical signals of a few volts at frequencies of several megahertz. The first requirement for achieving high switching frequencies is efficient charge transport in the semiconductor, which can be met by choosing organic semiconductors that provide good molecular ordering and large carrier mobilities. The second and more critical requirement is a small channel length. To meet this requirement, we have developed a process in which the TFTs are patterned using high-resolution silicon stencil masks. With this process, bottom-gate, top-contact organic TFTs with a channel length as small as 300 nm can be fabricated. For 11- stage complementary and unipolar ring oscillators based on TFTs with a channel length of 1 μm, signal propagation delays per stage as short as 6.6 μs and 420 ns have been measured at a supply voltage of 3 V.

  • 16:30 Weng W. Chow, Sandia National Laboratories (

    Semiconductor micro- and nano-lasers

  • 16:50 Zhehui (Jeph) Wang, Los Alamos National Laboratory (

    Thin film detector technology, from ultracold to ultrafast applications

    Riding on the advances and traditions in high-energy particle and nuclear physics, accelerator-driven experiments are in the forefront of material science, biology, chemistry and other disciplines. High-intensity X-ray sources from synchrotrons and X-ray free electrons lasers can interrogate materials with unprecedented temporal and spatial resolutions, opening up new frontiers in ultrafast material science, ultrafast biology and others. Meanwhile, accelerators have also been used to produce the highest intensity neutrons at sub-mK temperatures, opening doors to ultracold neutron science and applications. In this talk, we discuss the scientific motivations behind the ultrafast material and ultracold neutron sciences, and the roles and needs for thin film detector technology. We then highlight some recent progress in using thin film technology for ultrafast X-ray and ultracold neutron measurements. We conclude the discussions with some promising directions for thin-film detector technology development related to ultrafast X-rays and ultracold neutrons.

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