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Emerging Technologies 2018 Session Listing

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Session E3: Nanomaterials and Smart Materials

Start Time: 13:30, Thursday, May 10
Room: Sutcliffe B
Chaired by Guangrui (Maggie) Xia, University of British Columbia ( and John Madden, University of British Columbia (

  • 13:30 Peyman Servati, University of British Columbia (

    Smart textile innovations for technology connected health (STITCH)

  • 13:50 John Madden, University of British Columbia (

    Ionic skin--towards smart, compliant and active skin for robots and wearables

  • 14:10 Karen Kavanagh, Simon Fraser University (

    Transmission He ion microscopy

    We will describe experiments with a modified He+ ion microscope to monitor milling rates, channeling, beam steering, and diffraction through thin semiconducting materials.

  • 14:30 Andrzej Moscicki, Amepox Microelectronics Ltd. ( with A. Kinart and M. Abo Ras

    New thermal management solution with sinterable TIM materials

    Formulations contained mixture of micro and nano size filler start to be new way for improving its technical parameters. At this way is possible to improve electrical, mechanical as well as thermal properties of polymer composites for electronic packaging purpose. Especially the last one (thermally conductive) is one of the largest problems connected with actual electronic and microelectronics systems. The very important is removing of heat generated by active elements, particularly by the power elements. The most so far widespread technical solutions in the range of high thermally conductive layers (Thermal Interface Material - TIM), are compositions on the base of organic adhesives containing as a fillers the particle of silver in the powder or flake shapes with the reason that silver has very high thermally coefficient (ov. 420 W/mK). In the frame of research and development work Amepox prepared TIM compositions based on silver flakes, nanosilver and epoxy resin with a very high thermal conductivity even close 100 W/mK. All information about samples and results of our measurement will be present in the conference paper.

  • 14:50 Krishna Saraswat, Stanford University (

    Emerging interconnect technologies for nanoelectronics

  • 15:10 COFFEE BREAK (Mt. Curie Foyer, Sutcliffe Foyer)


  • 15:30 Shankar Rananavare, Portland State University ( with S.R. Darmakkolla

    Prospects of copper nanowire self-assembly for interconnect applications

    In the mid-nineties, researchers at IBM pioneered fabrication of copper-based interconnects that are currently in wide use. This electroplating method employs patterned carbon doped oxide (CDO) covered in copper diffusion barrier that is necessary to prevent migration of copper in silicon. As the scaling of transistor continues, the thickness of the diffusion barrier is becoming comparable to the copper film deposited, thereby significantly increasing undesirable high impedance and electromigration effects.


    In this talk, we will explore a hybrid method (bottom-up and top-down) to self-assemble copper nanowires for potential interconnect applications. It exploits magnetic Ni-coated copper nanowires to provide orientational/positional control and allows end-to-end connections between nanowires, anchored to a thiol-derivatized CDO surface. The solution phase deposition of these magnetic NWs in the presences of 2500 G magnetic field allows their placement and anchoring in interconnect channels patterned in CDO. Compared to randomly deposited NWs these assemblies show enhanced conductivity and may even find applications as transparent conductors.

  • 15:50 Aida Todri-Sanial, Centre National de la Recherche Scientifique (

    Charge-based doping of carbon nanotubes as back-end-of-line interconnect material

  • 16:10 Heike Riel, IBM Zurich (

    From III-V integration towards ballistic nanowire quantum networks

  • 16:30 Jeffry Kelber, University of North Texas ( with T. Cheng, W.A. Goddard III, M. Randle, J. Bird and P.A. Dowben

    Graphene by MBE on incommensurate polar oxides: Graphene Oxide/Buckled Graphene /Graphene Heterostructures.

    The direct growth of graphene by industrially scalable methods on dielectric substrates is a critical step towards practical graphene-based devices. Growth on incommensurate substrates potentially affords a broad array of oxides for different device applications. We report theoretical and experimental results demonstrating that C MBE at 850 K on MgO(111) yields first a non-planar graphene oxide layer, then a buckled graphene layer, and finally a third layer of "normal" graphene—all in azimuthal registry. The graphene oxide is the means by which these heterostructures are accommodated to an incommensurate substrate. Raman, photoemission, electron energy loss spectroscopy and low energy electron diffraction are in agreement with DFT calculations supporting the layer-by-layer growth of the graphene oxide/buckled graphene/graphene heterostructure. The substantial sp3, non-planar character of this heterostructure strongly suggest the presence of spin-orbit coupling and a room temperature spin Hall effect, while the graphene oxide layer has an experimental band gap of ~0.5 eV, in agreement with DFT calculations. Similar behavior has been observed on other polar oxides, such as Co3O4(111), but not on Cr2O3(0001), and a predictive factor for the growth of such heterostructures appears to be whether the C/oxide interface will support C-->oxide charge transfer.


    Acknowledgements: Work at UNT was supported by was supported by the NSF under grant no. ECCS-1508991, and in part by C-SPIN, a funded center of STARnet, a Semiconductor Research Corporation (SRC) program sponsored by MARCO and DARPA under task IDs 2381.001 and 2381.006. Work at Buffalo was supported by the NSF under the grant. No. ECCS-1509221. Work at UNL was supported by the NSF under grant No. ECCS-1508541. Work at Caltech was supported as part of the Computational Materials Sciences Program funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award Number DE-SC00014607. This work used the Extreme Science and Engineering Discovery Environment (XSEDE), which is supported by National Science Foundation grant number ACI- 1548562.

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